, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. n-channel mosfet transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 IRFZ44N features ? drain current -id=49a@ tc=25c ? drain source voltage- : vdss= 55v(min) ? static drain-source on-resistance : rds(on) = 0.032 q (max) ? fast switching description ? designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. absolute maximum ratings(ta=25c) symbol vdss vgs b idm pd tj tstg parameter drain-source voltage gate-source voltage-continuous drain current-continuous drain current-single pluse (tp=s10 u s) total dissipation @tc=25'c max. operating junction temperature storage temperature value 55 + 20 49 160 94 175 -55-175 unit v v a a w 'c ?c thermal characteristics symbol rth j-c rth j-a parameter thermal resistance, junction to case thermal resistance, junction to ambient max 1.5 62 unit "c/w ?c/w * ii 1 2 p -.? go) pin 0( f s< i.gat 2.dra 3.sol to-22 2) ^ y i 3) e in rce oc package \. ? b ???? j-^f l moov i h ?' ? ; t | k f i ?h c i "" i +41* d g *-? dw a b c l) f g h j k l cl r s u v v ? ? mm min 15.70 9.90 4.20 0.70 3.40 4.98 2.70 0.44 13.20 1.10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 3.60 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 ? poo nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
n-channel mosfet transistor IRFZ44N electrical characteristics tc=25c unless otherwise specified symbol v(br)dss vqs(th) ros(on) igss loss vsd parameter drain-source breakdown voltage gate threshold voltage drain-source on-resistance gate-body leakage current zero gate voltage drain current forward on-voltage conditions vgs= 0; id= 0.25ma vds= vgs; lo= 0.25ma vgs=10v; id=25a vgs= +20v;vds=0 vds= 55v; vgs= 0 vds= 55v; vgs= 0; tj= 150 xt ls= 25a; vgs= 0 min 55 2 max 4 0.032 100 25 250 1.3 unit v v q na ua v
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